• Grow high-quality III-nitride thin films using techniques such as metal-organic vapor phase epitaxy (MOVPE).
• Develop and optimize epitaxial processes to enhance crystal quality and performance.
• Conduct thermal, electrical, and microstructural characterization of grown samples to evaluate material and device properties.
• Collaborate with international partners and contribute to several EU-funded projects, gaining valuable exposure to European research in electronic components and systems.

• Doctoral degree in a suitable area (e.g. electrical engineering, physics, or materials science)
• Hands-on experience and solid understanding of epitaxial processes, ideally in MOVPE or MBE
• A strong track record of research in III-V or III-Nitride semiconductors
• Experience and solid understanding of relevant characterization methods, such as HRXRD, AFM, Photoluminescence (PL), SEM, and TEM
• Experience on probe-station based measurements for electrical characterization is a plus
• Experience in micro- and nanofabrication
• Good understanding of semiconductor device physics and WBG semiconductor devices
• Experience in writing grant proposals and securing research funding is an advantage

• Fixed-term position for 3 years (1+2)
• Opportunity to conduct independent research in Ota Nano (

  Ota Nano | Aalto University

  ) using cutting-edge infrastructure in Micronova and Nanomicroscopy Center
• Possibility to participate in already funded public-private-partnership projects, network with major European industrial and academic project partners and contribute to new research funding applications
• Possibility to co-advice graduate students and participate in teaching
• The starting salary for a postdoctoral researcher ranges from 4000-4200 €/month, depending on previous experience
• The contract includes Aalto University occupational healthcare

• a short cover letter stating your motivation for the position
• a CV
• a copy of study records
• the names and contact details of 2 references